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NTB45N06LT4G

Manufacturer:

On Semiconductor

Mfr.Part #:

NTB45N06LT4G

Datasheet:
Description:

MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 125 W 60 V Continuous Drain Current (ID):45 A 23 nC

ParameterValue
Voltage Rating (DC)60 V
Length10.29 mm
Width9.65 mm
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance26 MΩ
Height4.83 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
Contact PlatingTin
Number of Elements1
Current Rating45 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation2.4 W
Power Dissipation125 W
Number of Channels1
Input capacitance1.7 nF
Continuous Drain Current (ID)45 A
Rds On Max28 mΩ
Drain to Source Voltage (Vdss)60 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time13 ns
Turn-Off Delay Time36 ns
Element ConfigurationSingle
Fall Time158 ns
Rise Time341 ns
Gate Charge23 nC
Drain to Source Resistance28 mΩ
Gate to Source Voltage (Vgs)15 V
Drain to Source Breakdown Voltage (Vds)60 V
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Gate to Source Threshold Voltage1 V

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